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K1159 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1159 Silicon N-Channel MOS FET / TO-220AB Package Renesas
Renesas Electronics Renesas
K1159 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
1.2
ID = 10 A
0.8
2, 5 A
0.4
0
–40 0
40
80 120 160
Case Temperature TC (°C)
2SK1159, 2SK1160
Static Drain to Source on State
Resistance vs. Drain Current
10
5 Pulse Test
2
1.0
0.5
VGS = 10 V
15 V
0.2
0.1
0.5 1.0 2
5 10 20 50
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
10
–25°C
TC = 25°C
75°C
5
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current ID (A)
5
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