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K1160 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1160 Silicon N-Channel MOS FET / TO-220AB Package Renesas
Renesas Electronics Renesas
K1160 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1159 V(BR)DSS 450
breakdown voltage 2SK1160
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1159 IDSS
drain current
2SK1160
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1159 RDS(on)
on state resistance 2SK1160
Forward transfer admittance |yfs|
4.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward
VDF
voltage
Body to drain diode forward
t rr
voltage
Note: 1. Pulse test
Typ Max
±10
250
3.0
0.55 0.7
0.60 0.8
7.5
1150 —
340 —
55
17
55
100 —
45
0.9
350 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1159, 2SK1160
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
ID = 4 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
3
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