K2412 View Datasheet(PDF) - NEC => Renesas Technology
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K2412 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2412
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (pulse)*
ID(pulse)
±80
A
Total Power Dissipation (Tc = 25 ˚C) PT1
30
W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
20
A
Single Avalanche Energy**
EAS
22.5 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1. Gate
2. Drain
3. Source
1 23
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan
©
1994
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