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K1168 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1168 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1168 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1167, 2SK1168
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
5.5 V
16
6V
Pulse Test
12
5.0 V
8
4.5 V
4
VGS = 4 V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
20 A
6
4
10 A
2
ID = 5 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
3
1.0
10
OispliemraitetiodnbiynDRCthDOiPSspWe(aroa=rntei)1o0an m(TCs1(=1m12Ss05h0°oCµt))s
µs
0.3
0.1
1
Ta= 25°C
3 10
2SK1168
2SK1167
30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
4
75°C
–25°C
TC = 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
VGS = 10 V
0.5
0.2
15 V
0.1
0.05
1
2
5 10 20 50 100
Drain Current ID (A)
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