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K1167 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1167 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1167 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2SK1167, 2SK1168
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
5.5 V
16
6V
Pulse Test
12
5.0 V
8
4.5 V
4
VGS = 4V
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
30
10
3
1.0
DC
PW
Opera=ti1o0n
Operation in this area
is limited by RDS (on)
10
1
100
ms
µs
ms
(T
C
=(12S5h°Cot))
µs
0.3
0.1
1
Ta= 25°C
2SK1168
2SK1167
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
12
8
4
75°C
–25°C
TC = 25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
4
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