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K07N120 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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K07N120 Datasheet PDF : 13 Pages
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SKW07N120
350ns
300ns
250ns
200ns
IF=7A
150ns
100ns
50ns
IF=3.5A
0ns
200A/µs 400A/µs 600A/µs 800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
25A
20A
IF=7A
15A
10A
IF=3.5A
5A
0A
200A/µs
400A/µs
600A/µs
800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
1.50µC
1.25µC
1.00µC
IF=7A
0.75µC
0.50µC
IF=3.5A
0.25µC
0.00µC
200A/µs
400A/µs
600A/µs
800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
300A/µs
200A/µs
100A/µs
IF=3.5A
IF=7A
0A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
Power Semiconductors
9
Jul-02
 

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