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K07N120(2008) View Datasheet(PDF) - Infineon Technologies

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K07N120 Datasheet PDF : 13 Pages
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SKW07N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t F
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=8A,
VGE=15V/0V,
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=8A,
diF/dt=400A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
29
440
21
0.6
0.4
1.0
60
0.3
9
400
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
min.
Value
typ.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
-
30
tr
VCC=800V,
-
26
td(off)
IC=8A,
-
490
tf
VGE=15V/0V,
-
30
Eon
Eoff
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
-
1.0
-
0.7
Ets
Energy losses include
-
1.7
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
Tj=150°C
-
170
tS
VR=800V, IF=8A,
-
tF
diF/dt=500A/µs
-
Diode reverse recovery charge
Qrr
-
1.1
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t F
Irrm
dirr/dt
-
15
-
110
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
ns
µC
A
A/µs
Power Semiconductors
3
Rev. 2_2 Sep 08
 

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