K1831 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

View to exact match

K1831

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1831, 2SK1832

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max

Drain to source

breakdown

voltage

K1831

K1832

V(BR)DSS

450

—

—

500 —

—

Gate to source breakdown

V(BR)GSS

±30

—

—

voltage

Gate to source leak current IGSS

Zero gate

K1831

I DSS

voltage drain

current

K1832

—

—

±10

—

—

250

Gate to source cutoff voltage VGS(off)

2.0

—

3.0

Static drain to K1831

RDS(on)

—

0.6

0.8

source on state K1832

resistance

—

0.7

0.9

Forward transfer admittance |yfs|

4.0

7.0

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Notes 1. Pulse Test

1050 —

280 —

40

—

15

—

60

—

90

—

45

—

1.0

—

350 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 5 A

VGS = 10 V*1

ID = 5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 5 A

VGS = 10 V

RL = 6 Ω

IF = 10 A, VGS = 0

IF = 10 A, VGS = 0,

diF / dt = 100 A / µs

See characteristic curves of 2SK1157, 2SK1158

3

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