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K1831 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1831 Silicon N-Channel MOS FET Hitachi
Hitachi -> Renesas Electronics Hitachi
K1831 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SK1831, 2SK1832
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source
breakdown
voltage
K1831
K1832
V(BR)DSS
450
500 —
Gate to source breakdown
V(BR)GSS
±30
voltage
Gate to source leak current IGSS
Zero gate
K1831
I DSS
voltage drain
current
K1832
±10
250
Gate to source cutoff voltage VGS(off)
2.0
3.0
Static drain to K1831
RDS(on)
0.6
0.8
source on state K1832
resistance
0.7
0.9
Forward transfer admittance |yfs|
4.0
7.0
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Notes 1. Pulse Test
1050 —
280 —
40
15
60
90
45
1.0
350 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A
VGS = 10 V*1
ID = 5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 5 A
VGS = 10 V
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1157, 2SK1158
3
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