K1831 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
| Номер в каталоге | Компоненты Описание | производитель |
| K1831 | Silicon N-Channel MOS FET |  Hitachi -> Renesas Electronics  |
K1831 Datasheet PDF : 6 Pages
| |||
2SK1831, 2SK1832
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
K1831
K1832
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
10
A
30
A
10
A
50
W
150
°C
–55 to +150
°C
2
| Direct download click here |
|
|
| : |