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K1837 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1837 Silicon N-Channel MOS FET / High speed power switching Hitachi
Hitachi -> Renesas Electronics Hitachi
K1837 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2SK1836, 2SK1837
Electrical Characteristics (Ta = 25°C)
Item
Drain to source K1836
breakdown
voltage
K1837
Gate to source breakdown
voltage
Gate to source leak current
Zero gate
K1836
voltage drain
current
K1837
Gate to source cutoff voltage
Static drain to K1836
source on state K1837
resistance
Forward transfer admittance
Symbol Min
V(BR)DSS
450
500
V(BR)GSS
±30
I GSS
I DSS
VGS(off)
2.0
RDS(on)
|yfs|
22
Typ Max
±10
250
3.0
0.08 0.10
0.085 0.11
35
Input capacitance
Ciss
Output capacitance
Coss —
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(of f)
Fall time
tf
Body to drain diode forward VDF
voltage
Body to drain diode reverse trr
recovery time
Note 1. Pulse Test
8150 —
2100 —
180 —
80
250 —
550 —
220 —
1.1
620 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A
VGS= 10 V*1
ID = 25 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 25 A
VGS = 10 V
RL = 1.2
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0,
diF / dt = 100 A / µs
3
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