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K1947 Просмотр технического описания (PDF) - Renesas Electronics

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K1947 Silicon N-Channel MOS FET / High speed power switching Renesas
Renesas Electronics Renesas
K1947 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1947
Main Characteristics
Power vs. Temperature Derating
300
200
100
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
100
10 V 8 V
80
6V
60
5.5 V
40
5V
20
4V
VGS = 3.5 V
0
4
8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
50 A
2
1
20 A
ID = 10 A
0
4
8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
1000
300
100
30
10
3
DC
PW
Operatio=n
Operation in this
area is limited
by R DS (on)
10
(Tc
1
1001µ0sµs
ms
m= s25(1C)shot)
1
0.3
Ta = 25°C
0.1
13
10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
40
VDS = 10 V
Pulse Test
30
20 Tc = 25°C
10
75°C
–25°C
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
VGS = 10 V
0.02
0.01
0.005
2
5 10 20 50 100 200
Drain Current ID (A)
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