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K1947 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1947 Silicon N-Channel MOS FET / High speed power switching Renesas
Renesas Electronics Renesas
K1947 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1947
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Ratings
250
±30
50
200
50
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 250
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
IGSS
Zero gate voltage drain current
IDSS
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
|yfs|
20
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body to drain diode forward voltage VDF
Body to drain diode reverse
recovery time
trr
Note: 3. Pulse Test
Typ
Max
±10
250
3.0
0.047 0.06
30
5810
2360
270
75
270
420
200
1.2
140
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V*3
S
ID = 25 A, VDS = 10 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 25 A, VGS = 10 V,
ns RL = 1.2
ns
ns
V IF = 50 A, VGS = 0
ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
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