K1518 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
K1518 Datasheet PDF : 7 Pages
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2SK1517, 2SK1518
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
VGS = 10 V
0.8
0.6
ID = 20 A
0.4
10 A
5A
0.2
0
–40 0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5,000
di/dt = 100 A/µs, Ta = 25°C
2,000 VGS = 0
Pulse Test
1,000
500
200
100
50
0.5 1 2
5 10 20
50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
VDD = 100 V
250 V
400
400 V
16
VGS
VDS
300
12
200
8
100
VDD = 400 V
250 V
ID = 20 A
4
100 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
5
VDS = 20 V
Pulse Test
2
–25°C
TC = 25°C
75°C
1
0.5
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current ID (A)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
1,000
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td (off)
200
tr
100
tf
50
td (on)
20
10
VGS = 10 V
VDD
=•
•
30
V
PW = 2 µs, duty < 1%
5
0.5 1 2
5 10 20 50
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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