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K1775 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталогеКомпоненты Описаниепроизводитель
K1775 Silicon N-Channel MOS FET Renesas
Renesas Electronics Renesas
K1775 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1775
Main Characteristics
Power vs. Temperature Derating
90
60
30
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
10
10 V
6V
8
Pulse Test
5V
6
4
4.5 V
2
VGS = 4 V
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
ID = 10 A
12
8
5A
4
2A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30
10
3
1
0.3
Opienrlaitmhtiioistneadrebay
is
R
DS(on)
PW
DC
=
Operation
10
1(T0cm=s12(51m°1SCs0h)0otµ)s
µs
0.1 Ta = 25°C
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
8
VDS = 20 V
Pulse Test
6
4
75°C
2 TC = 25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
VGS = 10 V
2
1
15 V
0.5
0.2
Pulse Test
0.1
0.05
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
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