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K08EEH5 View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
K08EEH5 High speed 5 IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft anti parallel diode Infineon
Infineon Technologies Infineon
K08EEH5 Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
IKA08N65H5
Highspeedswitchingseriesfifthgeneration
0.200
Eoff
Eon
0.175
Ets
0.200
Eoff
Eon
0.175
Ets
0.150
0.150
0.125
0.125
0.100
0.100
0.075
0.075
0.050
0.050
0.025
0.025
0.000
5
15 25 35 45 55 65 75 85
rG,GATERESISTOR[]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=4A,Dynamictestcircuitin
Figure E)
0.000
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=4A,rG=48,DynamictestcircuitinFigure
E)
0.200
0.175
16
130V
520V
14
0.150
Eoff
Eon
12
Ets
0.125
10
0.100
8
0.075
6
0.050
4
0.025
2
0.000
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0.0
5.0
10.0
15.0
20.0
25.0
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
functionofcollectoremittervoltage
(IC=8A)
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=4A,rG=48,DynamictestcircuitinFigure
E)
11
Rev.2.1,2015-05-05
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