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2SK2413 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SK2413 MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor NEC
NEC => Renesas Technology NEC
2SK2413 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2413
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 69.4 ˚C/W
10
1
0.1
0.01
10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10
100
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
10
1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
160
Pulsed
140
120
100
80
VGS = 4 V
60
40
VGS = 10 V
20
0
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
120
Pulsed
100
80
60
ID = 5 A
40
20
0
0
10
20
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 10 V
ID = 1 mA
1.5
1.0
0.5
0
–50
0
50
100
150
Tch - Channel Temperature - ˚C
5
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