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2SK2413 데이터 시트보기 (PDF) - NEC => Renesas Technology

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2SK2413 MOS FIELD EFFECT TRANSISTOR / N-Channel MOS Field Effect Transistor NEC
NEC => Renesas Technology NEC
2SK2413 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
Low On-Resistance
RDS(on)1 = 70 mMAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mMAX. (@ VGS = 4 V, ID = 5.0 A)
Low Ciss Ciss = 860 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
8.0 ±0.2
4.5 ±0.2
1 23
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse)
±40
A
Total Power Dissipation (TA = 25 ˚C) PT
1.8
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
10
mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
1.4 ±0.2
1.4 ±0.2
0.5 ±0.1
0.5 ±0.1 0.5 ±0.1
1. Gate
2. Drain
3. Source
MP-10 (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
©
1994
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