BDX34C View Datasheet(PDF) - ON Semiconductor
Part Name
Description
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BDX34C Datasheet PDF : 6 Pages
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BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
BDX33B/BDX34B
80
−
BDX33C/BDX34C
100
−
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, RBE = 100)
VCER(sus)
Vdc
BDX33B/BDX34B
80
−
BDX33C/BDX33C
100
−
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)
VCEX(sus)
Vdc
BDX33B/BDX34B
80
−
BDX33C/BDX34C
100
−
Collector Cutoff Current
(VCE = 1/2 rated VCEO, IB = 0)
Collector Cutoff Current
(VCB = rated VCBO, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
ICEO
ICBO
IEBO
mAdc
−
0.5
−
10
mAdc
−
1.0
−
5.0
−
10
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
750
−
−
BDX33B, 33C/34B, 34C
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
VCE(sat)
−
2.5
Vdc
BDX33B, 33C/34B, 34C
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
2.5
Vdc
BDX33B, 33C/34B, 34C
Diode Forward Voltage
(IC = 8.0 Adc)
VF
−
4.0
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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