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G03H1202(2008) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G03H1202
(Rev.:2008)
Infineon
Infineon Technologies Infineon
G03H1202 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IGP03N120H2
IGW03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3
Max. Value
Unit
2.0
K/W
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=300μA
VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VGE(th)
ICES
IGES
gfs
IC=90μA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=3A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
-
-V
2.2
2.8
2.5
-
2.4
-
3
3.9
μA
-
20
-
80
-
100 nA
2
-S
205
- pF
24
-
7
-
22
- nC
7
- nH
13
-
Power Semiconductors
2
Rev. 2.6 Febr. 08
 

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