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G03H1202(2008) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G03H1202
(Rev.:2008)
Infineon
Infineon Technologies Infineon
G03H1202 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
Qualified according to JEDEC2 for target applications
PG-TO220-3-1
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
IGW03N120H2
IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking
G03H1202
G03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
Unit
1200
V
A
9.6
3.9
9.9
9.9
±20
V
62.5
W
-40...+150
°C
260
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08
 

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