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BQ24153 Просмотр технического описания (PDF) - Texas Instruments

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BQ24153 Fully Integrated Switch-Mode One-Cell Li-Ion Charger With Full USB Compliance and USB-OTG Support TI
Texas Instruments TI
BQ24153 Datasheet PDF : 41 Pages
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www.ti.com
bq24153
bq24156, bq24158
SLUSA27 – MARCH 2010
ELECTRICAL CHARACTERISTICS (continued)
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
PWM
Voltage from BOOT pin to SW pin
During charge or boost operation
6.5
V
Internal top reverse blocking MOSFET
on-resistance
IIN(LIMIT) = 500 mA, Measured from VBUS to PMID
180
250
Internal top N-channel Switching MOSFET
on-resistance
Internal bottom N-channel MOSFET
on-resistance
Measured from PMID to SW,
VBOOT – VSW= 4V
Measured from SW to PGND
120
250 m
110
210
f(OSC)
Oscillator frequency
Frequency accuracy
–10%
3.0
MHz
10%
D(MAX)
Maximum duty cycle
99.5%
D(MIN)
Minimum duty cycle
0
Synchronous mode to non-synchronous
mode transition current threshold(2)
Low-side MOSFET cycle-by-cycle current sensing
100
mA
CHARGE MODE PROTECTION
VOVP_IN_USB
VOVP-IN_DYN
Input VBUS OVP threshold voltage
(bq24153/8)
V(OVP_IN_USB) hysteresis (bq24153/8)
Input VBUS OVP threshold voltage
(bq24156)
VBUS threshold to turn off converter during charge
VBUS falling from above V(OVP_IN_USB)
Threshold over VBUS to turn off converter during
charge
6.3
6.5
170
9.57
9.8
6.7
V
mV
10
V(OVP_IN_DYN) hysteresis (bq24156)
VBUS falling from above V(OVP_IN_DYN)
VOVP
Output OVP threshold voltage
V(OVP) hysteresis
V(CSOUT) threshold over V(OREG) to turn off charger
during charge
Lower limit for V(CSOUT) falling from above V(OVP)
ILIMIT
Cycle-by-cycle current limit for charge
Charge mode operation
VSHORT
Trickle to fast charge threshold
VSHORT hysteresis
V(CSOUT) rising
VCSOUT falling below VSHORT
ISHORT
Trickle charge charging current
VCSOUT VSHORT)
BOOST MODE OPERATION FOR VBUS (OPA_MODE = 1, HZ_MODE = 0, bq24153/8 only)
VBUS_B
Boost output voltage (to VBUS pin)
2.5V < VCSOUT < 4.5 V
Boost output voltage accuracy
Including line and load regulation
140
110
117
121
%VOREG
11
1.8
2.4
3.0
A
2.0
2.1
2.2
V
100
mV
20
30
40 mA
5.05
–3%
V
3%
IBO
IBLIMIT
VBUSOVP
VBATMAX
VBATMIN
Maximum output current for boost
Cycle by cycle current limit for boost
Overvoltage protection threshold for boost
(VBUS pin)
VBUS_B = 5.05 V, 2.5 V < VCSOUT < 4.5 V
VBUS_B = 5.05 V, 2.5 V < VCSOUT < 4.5 V
Threshold over VBUS to turn off converter during
boost
VBUSOVP hysteresis
Maximum battery voltage for boost (CSOUT
pin)
VBUS falling from above VBUSOVP
VCSOUT rising edge during boost
VBATMAX hysteresis
Minimum battery voltage for boost (CSOUT
pin)
VCSOUT falling from above VBATMAX
During boosting
Before boost starts
200
mA
1.0
A
5.8
6.0
6.2
V
162
mV
4.75
4.9 5.05
V
200
mV
2.5
V
2.9 3.05
V
Boost output resistance at high-impedance
mode (From VBUS to PGND)
CD = 1 or HZ_MODE = 1
217
k
PROTECTION
TSHTDWN)
Thermal trip
Thermal hysteresis
165
10
°C
TCF
T32S
T15M
Thermal regulation threshold
32 second timer
15 minute timer
Charge current begins to reduce
32 Second mode
15 Minute mode
120
15
32
12
s
15 m
(2) Bottom N-channel FET always turns on for ~30 ns and then turns off if current is too low.
Copyright © 2010, Texas Instruments Incorporated
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