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BQ24153 Просмотр технического описания (PDF) - Texas Instruments

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BQ24153 Fully Integrated Switch-Mode One-Cell Li-Ion Charger With Full USB Compliance and USB-OTG Support TI
Texas Instruments TI
BQ24153 Datasheet PDF : 41 Pages
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www.ti.com
bq24153
bq24156, bq24158
SLUSA27 – MARCH 2010
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
INPUT CURRENTS
I(VBUS)
I(vbus_leak)
VBUS > VBUS(min), PWM switching
VBUS supply current control
VBUS > VBUS(min), PWM NOT switching
0°C < TJ < 85°C, CD=1 or HZ_MODE=1
Leakage current from battery to VBUS pin
0°C < TJ < 85°C, V(CSOUT) = 4.2 V, High Impedance
mode, VBUS=0 V
Battery discharge current in High
Impedance mode, (CSIN, CSOUT, SW pins)
0°C < TJ < 85°C, V(CSOUT) = 4.2 V, High Impedance
mode, V(BUS) = 0 V, SCL, SDA, OTG = 0 V
or 1.8 V
VOLTAGE REGULATION
V(OREG)
Output regulation voltage progrmmable
range
Operating in voltage regulation, programmable
Voltage regulation accuracy
TA = 25°C
CURRENT REGULATION (FAST CHARGE)
IO(CHARGE)
Output charge current programmable range
Low charge current
Regulation accuracy of the voltage across
R(SNS) (for charge current regulation)
V(IREG) = IO(CHARGE) × R(SNS)
WEAK BATTERY DETECTION
V(LOWV)
Weak battery voltage threshold
programmable range
Weak battery voltage accuracy
Hysteresis for V(LOWV)
Deglitch time for weak battery threshold
CD, OTG and SLRST PIN LOGIC LEVEL
VIL
Input low threshold level
VIH
Input high threshold level
I(bias)
Input bias current
CHARGE TERMINATION DETECTION
I(TERM)
Termination charge current programmable
range
Deglitch time for charge termination
Regulation accuracy for termination current
across R(SNS)
V(IREG_TERM) = IO(TERM) × R(SNS)
bq24153, V(LOWV) V(CSOUT) < V(OREG),
VBUS > V(SLP), R(SNS) = 68 m, LOW_CHG=0,
Programmable
bq24156, V(LOWV) V(CSOUT) < V(OREG),
VBUS > V(SLP), R(SNS) = 68 m, LOW_CHG=0,
Programmable
VLOWV VCSOUT < VOREG, VBUS>VSLP, RSNS=68 mΩ,
LOW_CHG=1
37.4 mV V(IREG)< 44.2mV
44.2 mV V(IREG)
Adjustable using I2C control
Battery voltage falling
Rising voltage, 2-mV over drive, tRISE = 100 ns
Voltage on control pin is 5 V
V(CSOUT) > V(OREG) – V(RCH),
VBUS > V(SLP), R(SNS) = 68 m, Programmable
Both rising and falling, 2-mV overdrive,
tRISE, tFALL = 100 ns
3.4 mV V(IREG_TERM) 6.8 mV
6.8 mV < V(IREG_TERM) 17 mV
17 mV < V(IREG_TERM) 27.2 mV
MIN TYP MAX UNIT
10
mA
5
15
23 mA
5 mA
23 mA
3.5
–0.5%
–1%
4.44
V
0.5%
1%
550
550
–3.5%
-3%
1250 mA
1550 mA
325
350 mA
3.5%
3%
3.4
–5%
100
30
3.7
V
5%
mV
ms
0.4
V
1.3
V
1.0 µA
50
–15%
–10%
–5.5%
400 mA
30
ms
15%
10%
5.5%
Copyright © 2010, Texas Instruments Incorporated
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