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MMBT4401K View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
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MMBT4401K Datasheet PDF : 4 Pages
1 2 3 4
MMBT4401K
PNP Epitaxial Silicon Transistor
Switching Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2XK
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Value
60
40
6
600
350
150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
IBEV
ICEX
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
DC Current Gain *
VCE (sat) Collector-Emitter Saturation Voltage *
VBE (sat) Base-Emitter Saturation Voltage *
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width300µs, Duty Cycle2%
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 100µA, IC = 0
VCE = 35V, VEB = 0.4V
VCE = 35V, VEB = 0.4V
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
VCE = 2V, IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
I C= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 20mA, VCE = 10V, f = 100MHz
VCB=5V, IE=0, f=100KHz
VCC = 30V, VBE = 2V
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
Min.
60
40
6
20
40
80
100
40
0.75
250
Units
V
V
V
mA
mW
°C
Max.
100
100
Units
V
V
V
nA
nA
300
0.4
0.75
0.95
1.2
6.5
35
255
V
V
V
V
MHz
pF
ns
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT4401K Rev. A
www.fairchildsemi.com
 

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