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FCP20N60 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FCP20N60 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FCP20N60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom : 5.5 V
100
10-1
Notes :
1. 250µs Pulse Test
2.
T
C
=
25°C
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
Figure 2. Transfer Characteristics
102
101
100
2
150°C
25°C
-55°C
Note
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
0.3
VGS = 10V
0.2
VGS = 20V
0.1
Note : TJ = 25°C
0.0
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
I , Drain Current [A]
D
101
100
0.2
150°C
25°C
Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Coss
Ciss
Crss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 20A
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
3
FCP20N60 / FCPF20N60 Rev. A1
www.fairchildsemi.com
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