N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
· Low ON resistance.
· Ultrahigh-speed switching.
· High-speed diode (trr=120ns).
Absolute Maximum Ratings at Ta = 25˚C
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta = 25˚C
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=10mA, VGS=0
Zero-Gate Votlage Drain Current
IDSS VDS=480V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=2A
Static Drain-to-Source On-State Resistance
RDS(on) ID=2A, VGS=10V
(Note) Be careful in handling the 2SK1923 because it has no protection diode between gate and source.
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220AB
–55 to +150 ˚C
min typ max
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63099TH (KT)/42693TH (KOTO) AX-9260 No.4312–1/4