IRFP460 View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

View to exact match

IRFP460

Power MOSFET

Vishay Semiconductors 

IRFP460, SiHFP460

Vishay Siliconix

10 000

8000

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

6000

Ciss

4000

2000

0

100

91237_05

Coss

Crss

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

102

150 °C

25 °C

101

0.6

91237_07

VGS = 0 V

0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20

ID = 20 A

16

VDS = 400 V

VDS = 250 V

12

VDS = 100 V

8

4

0

0

91237_06

For test circuit

see figure 13

40

80

120

160

200

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

103

Operation in this area limited

5

by RDS(on)

2

102

5

10 µs

2

10

5

2

1

1

91237_08

100 µs

TC = 25 °C

TJ = 150 °C

Single Pulse

1 ms

10 ms

2

5

2

10

5 102 2

5 103

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91237

S-81360-Rev. A, 28-Jul-08

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