MRX1533L View Datasheet(PDF) - AnaSem Semiconductors
Part Name
Description
View to exact match
MRX1533L
AnaSem Semiconductors
MRX1533L Datasheet PDF : 14 Pages
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Rev. E13-01
Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1533L Series
APPLICATION INFORMATIONS
Detection of magnetic field
To operate output switch, the magnetic field should be applied to the sensor with sufficient magnetic
flux density and correct direction. MR series are designed to be ON-state (L-level output) when the
horizontal direction magnetic field is applied in parallel to the marked side of sensor, with sufficient
magnetic flux (MOPS or MOPN value) regardless of polarity of magnet. Because MR series detect the
horizontal direction magnetic field, it has not influence of the reverse-magnetic field. And also, MR
series detect the vertical direction magnetic field according to the level of magnetic flux, so that it is
possible to apply to not only slide type but also fold type.
Front view
Top view
VSS
N or S
S or N
Detection direction
35°
N or S
S or N
(Marked side)
35°
VIN
VOUT
VIN
VOUT
Application example 1 -- [Fold type]
VD
Magnet
VD
VD
MR sensor
Position A
Output level = Low
Position B
Output level = Low → High
Position C
Output level = High
In case MR series is used for fold type cellular phone, IC sense the conditions of opening and shutting
of the cover by detection of the magnetic flux according to the distance between IC and magnet.
In position A, output is L-level (ON-state) because the detected magnetic flux is sufficient. The
magnetic flux decrease according to the magnet is moved from IC (Position A→B). Then the IC is
turned H-level (OFF-state) because the magnetic flux become MRP or less (Position B→C).
Magnetic field direction
N or S
Detection direction
Moving
direction
Moving
direction
S or N
Moving
direction
S or N
Magnetic field direction
N or S
Moving
direction
Detection direction
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