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MRX1533L View Datasheet(PDF) - AnaSem Semiconductors

Part Name
Description
MFG CO.
MRX1533L Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Rev. E13-01
Low power consumption, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch
MRX1533L Series
Application example 2 -- [Slide type & Rotary type]
Magnet
MR sensor
Position A
Output level = Low
VD
HD
Position B
Output level = Low High
HD
Position C
Output level = High
MR sensor
Magnet
Position A
Output level = High Low
MR sensor
Position B
Output level = Low
MR sensor
Position C
Output level = Low High
MR sensor
Position D
Output level = High
In the detection of the slide type, there are two ways of arrangement of magnetic field detecting
direction against moving direction. One is parallel and another is cross with moving direction.
In case of parallel positioning of magnetic field with moving direction [arrangement 1], the output of IC
might be L-level (ON-state) H-level (OFF-state) L-level (ON-state) H-level (OFF-state) due to
reverse-magnetic field.
To prevent from this malfunction, it is recommended to arrange the detection direction of sensor and
magnetic field to be crossed with moving direction of cover [arrangement 2].
Moving
direction
Moving
direction
N or S
Magnetic field direction
S or N
Detection direction
Moving
direction
N or S
S or N
Moving
direction
Magnetic field direction
Detection direction
[Arrangement 1]
Parallel the direction of detection magnetic field
with the moving direction
[Arrangement 2]
Cross the direction of detection magnetic field
with the moving direction
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