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KA1L0380R View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
KA1L0380R
Fairchild
Fairchild Semiconductor Fairchild
KA1L0380R Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Drain-source breakdown voltage
BVDSS VGS=0V, ID=50µA
800 -
-
V
Zero gate voltage drain current
IDSS
Static drain-source on resistance (Note) RDS(ON)
Forward transconductance (Note)
gfs
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
-
-
50 µA
-
- 200 µA
-
4.0 5.0
1.5 2.5
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
- 779 -
- 75.6 -
pF
- 24.9 -
Turn on delay time
Rise time
Turn off delay time
Fall time
td(on) VDD=0.5BVDSS, ID=3.0A
-
40
-
tr
td(off)
(MOSFET switching
time are essentially
independent of
-
95
-
nS
- 150 -
tf
operating temperature)
-
60
-
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Qg
VGS=10V, ID=3.0A,
VDS=0.5BVDSS (MOSFET
-
-
34
Qgs
switching time are
-
7.2
-
nC
essentially independent of
Qgd operating temperature)
- 12.1 -
Note:
Pulse test: Pulse width 300µS, duty cycle 2%
S = -1--
R
3
 

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