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G04N60P View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
G04N60P
Infineon
Infineon Technologies Infineon
G04N60P Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SGP04N60
SGD04N60
100ns
td(off)
tf
td(off)
100ns tf
td(on)
td(on)
tr
10ns
0A
2A
4A
6A
8A 10A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 67,
Dynamic test circuit in Figure E)
tr
10ns
0
50100150200
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
max.
typ.
2.5V
min.
2.0V
-50°C 0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.2mA)
6
Rev. 2.2 Sep 07
 

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