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Part Name
Description
K4A60DA View Datasheet(PDF) - Toshiba
Part Name
Description
View to exact match
K4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
K4A60DA Datasheet PDF : 0 Pages
I
D
– V
DS
2
COMMON SOURCE
10
Tc
=
25°C
PULSE TEST
1.6
1.2
7
8
6.5
0.8
6
0.4
5.5
VGS
=
5 V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
8
COMMON SOURCE
VDS
=
20 V
PULSE TEST
6.4
4.8
3.2
25
1.6
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
TK4A60DA
I
D
– V
DS
5
COMMON SOURCE 10
8
Tc
=
25°C
PULSE TEST
4
7.5
3
7
2
6.5
1
6
VGS
=
5.5V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25°C
PULSE TEST
16
12
8
ID
=
3.5 A
4
1.8
0.9
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
10 V
PULSE TEST
Tc
= −
55 °C
25
1
100
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
100
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
VGS
=
10, 15 V
1
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2010-08-30
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