TIP36C(2008) View Datasheet(PDF) - Central Semiconductor
Part Name
Description
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TIP36C Datasheet PDF : 2 Pages
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TIP35 TIP35A TIP35B TIP35C NPN
TIP36 TIP36A TIP36B TIP36C PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP35, TIP36
Series types are Complementary Silicon Power
Transistors manufactured by the epitaxial base
process, designed for high current amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-218 TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
TIP35
TIP36
40
40
TIP35A TIP35B
TIP36A TIP36B
60
80
60
80
5.0
25
40
5.0
125
-65 to +150
1.0
TIP35C
TIP36C
100
100
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=30V, (TIP35, TIP35A, TIP36, TIP36A)
ICEO
VCE=60V, (TIP35B, TIP35C, TIP36B, TIP36C)
ICES
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=30mA (TIP35, TIP36)
40
BVCEO
IC=30mA (TIP35A, TIP36A)
60
BVCEO
IC=30mA (TIP35B, TIP36B)
80
BVCEO
IC=30mA (TIP35C, TIP36C)
100
VCE(SAT) IC=15A, IB=1.5A
VCE(SAT) IC=25A, IB=5.0A
VBE(ON) VCE=4.0V, IC=15A
VBE(ON) VCE=4.0V, IC=25A
hFE
VCE=4.0V, IC=1.5A
25
hFE
VCE=4.0V, IC=15A
10
hfe
VCE=10V, IC=1.0A, f=1.0kHz
25
fT
VCE=10V, IC=1.0A, f=1.0MHz
3.0
MAX
1.0
1.0
0.7
1.0
1.8
4.0
2.0
4.5
100
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
MHz
R1 (29-October 2008)
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