SI1303DL View Datasheet(PDF) - Vishay Semiconductors
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SI1303DL Datasheet PDF : 9 Pages
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Si1303DL
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = VGS, ID = - 250 µA
- 0.6
- 1.4
V
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
-1
µA
-5
VDS = - 5 V, VGS = - 4.5 V
- 2.5
A
VGS = - 4.5 V, ID = - 1 A
0.360 0.430
VGS = - 3.6 V, ID = - 0.7 A
0.400 0.480
Ω
VGS = - 2.5 V, ID = - 0.3 A
0.560 0.700
VGS = - 10 V, ID = - 1 A
1.7
S
IS = - 0.3 A, VGS = 0 V
- 1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
IF = - 1 A, dI/dt = 100 A/µs
1.7
2.2
0.38
nC
0.63
9
15
31
45
12.5
20
ns
14
20
35
55
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
6
VGS = 4.5 V
5
4V
5
4
3.5 V
4
3
3V
3
TC = - 55 °C
25°C
125 °C
2
2.5 V
1
2V
1 V, 1.5 V
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71075
S10-0110-Rev. F, 18-Jan-10
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