SI1303DL-T1 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
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SI1303DL-T1 Datasheet PDF : 9 Pages
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P-Channel 2.5-V (G-S) MOSFET
Si1303DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.430 at VGS = - 4.5 V
- 20
0.480 at VGS = - 3.6 V
0.700 at VGS = - 2.5 V
ID (A)
- 0.72
- 0.68
- 0.56
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G1
3D
S2
Top View
Marking Code
LA X
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1303DL-T1-E3 (Lead (Pb)-free)
Si1303DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
V
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
IDM
- 0.72
- 0.67
- 0.58
- 0.54
A
- 2.5
Continuous Diode Current (Diode Conduction)a
IS
- 0.28
- 0.24
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
0.34
0.22
0.29
W
0.19
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
315
360
285
Maximum
375
430
340
Unit
°C/W
Document Number: 71075
S10-0110-Rev. F, 18-Jan-10
www.vishay.com
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