S3C2800 View Datasheet(PDF) - Samsung

Part Name

Description

View to exact match

S3C2800

32-BIT RISC MICROPROCESSOR

Samsung 

PRELIMINARY DATA SHEET

S3C2800 MICROCONTROLLER

Table 7. PCI I/O PAD DC Electrical Characteristics

(VDD = 1.8 V -0.1 V/+0.15 V, VDDP = 3.3 V ± 0.3 V, TOPR = 0 to 70 °C)

Symbol

Parameters

Condition

Min

VIH High level input voltage

0.47VDDP

VIL Low level input voltage

-0.5

II

Input Leakage Current

-10

VOH High level output voltage

IOH = -500 µA

0.9VDDP

VOL Low level output voltage

IOL = 1500 µA

Type

Max

VDDP+0.5

0.33VDDP

10

0.1VDDP

Unit

V

V

µA

V

V

19

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