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S3C2800 View Datasheet(PDF) - Samsung

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S3C2800 Datasheet PDF : 22 Pages
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S3C2800 MICROCONTROLLER
DATA SHEET
DC ELECTRICAL CHARACTERISTICS
Table 6. Normal I/O PAD DC Electrical Characteristics
(VDD = 1.8 V -0.1 V/+0.15 V, VDDP = 3.3 V ± 0.3 V, TOPR = 0 to 70 °C)
Symbol
Parameters
Condition
Min Type Max
VIH High level input voltage
LVCMOS interface
2.0
VIL Low level input voltage
LVCMOS interface
0.8
VT Switching threshold
1.4
VT+ Schmitt trigger, positive-going threshold CMOS
2.0
VT- Schmitt trigger, negative-going threshold CMOS
0.8
IIH High level input current
Input buffer
VIN = VDDP
-10
10
IIL Low level input current
Input buffer
VIN = VSS
-10
10
Input buffer with pull-up
-120 -66
-20
VOH High level output voltage
Type B4
IOH = -4 mA
2.4
Type B8
IOH = -8 mA
2.4
Type B12
IOH = -12 mA
2.4
VOL Low level output voltage
Type B4
IOL = 4 mA
0.4
Type B8
IOL = 8 mA
0.4
Type B12
IOL = 12 mA
0.4
CIN Input capacitance
Any Input and
4
Bi-directional
Buffers
COUT Output capacitance
Any Output
4
Buffers
Unit
V
V
V
V
µA
µA
V
V
pF
pF
18
 

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