TDA8357 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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TDA8357 Datasheet PDF : 16 Pages
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Philips Semiconductors
Full bridge vertical deflection output circuit
in LVDMOS
Preliminary specification
TDA8357J
CHARACTERISTICS
VP = 12 V; VFB = 45 V; fvert = 50 Hz; VI(bias) = 880 mV; Tamb = 25 °C; measured in test circuit of Fig.3; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
VP
VFB
Iq(P)(av)
Iq(P)
Iq(FB)(av)
operating supply voltage
flyback supply voltage
average quiescent supply current
quiescent supply current
average quiescent flyback supply
current
note 1
during scan
no signal; no load
during scan
7.5 12
18
V
2VP 45
66
V
−
10
15
mA
−
55
75
mA
−
−
10
mA
Inputs A and B
Vi(dif)(p-p) differential input voltage
note 2
−
(peak-to-peak value)
VI(bias)
input bias voltage
note 2
100
II(bias)
input bias current
−
Outputs A and B
Vloss(1)
Vloss(2)
Io(p-p)
LE
voltage loss first scan part
voltage loss second scan part
output current (peak-to-peak value)
linearity error
note 3
Io = 0.7 A
−
Io = 1.0 A
−
note 4
Io = −0.7 A
−
Io = −1.0 A
−
−
Io(p-p) = 2.0 A; notes 5 and 6
adjacent blocks
−
non adjacent blocks
−
Voffset
offset voltage
across RM; Vi(dif) = 0 V
VI(bias) = 200 mV
−
VI(bias) = 1 V
−
∆Voffset(T) offset voltage variation with temperature across RM; Vi(dif) = 0 V
−
VO
DC output voltage
Vi(dif) = 0 V
−
Gv(ol)
open-loop voltage gain
notes 7 and 8
−
f−3dB(h)
high −3 dB cut-off frequency
open-loop
−
Gv
voltage gain
note 9
−
∆Gv(T)
voltage gain variation with the
−
temperature
PSRR
power supply rejection ratio
note 10
80
1000 1500 mV
880 1600 mV
25
35
µA
−
3.9 V
−
5.5 V
−
2.8 V
−
4.0 V
−
2.0 A
1
2
%
1
3
%
−
−
−
0.5VP
60
1
1
−
±15
±25
40
−
−
−
−
10−4
mV
mV
µV/K
V
dB
kHz
K−1
90
−
dB
1999 Nov 10
6
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