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MV2105 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MV2105 Silicon Tuning Diode ONSEMI
ON Semiconductor ONSEMI
MV2105 Datasheet PDF : 5 Pages
1 2 3 4 5
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit TR, Tuning Ratio
VR = 4.0 Vdc,
f = 50 MHz
C2/C30
f = 1.0 MHz
Device
Marking Package
Shipping
Min Nom Max
Typ
Min Typ Max
MMBV2101LT1
M4G SOT−23 3,000 / Tape & Reel 6.1
6.8
7.5
450
2.5 2.7 3.2
MMBV2101LT1G M4G SOT−23 3,000 / Tape & Reel 6.1
6.8
7.5
(Pb−Free)
450
2.5 2.7 3.2
MMBV2101L
M4G SOT−23
Bulk (Note 1)
6.1
6.8
7.5
450
2.5 2.7 3.2
MV2101
MV2101 TO−92
1,000 per Box
6.1
6.8
7.5
450
2.5 2.7 3.2
MV2101G
MV2101 TO−92
(Pb−Free)
1,000 per Box
6.1
6.8
7.5
450
2.5 2.7 3.2
MMBV2103LT1
4H
SOT−23 3,000 / Tape & Reel 9.0
10
11
400
2.5 2.9 3.2
MMBV2105LT1
4U
SOT−23 3,000 / Tape & Reel 13.5
15
16.5
400
2.5 2.9 3.2
MMBV2105LT1G
4U
SOT−23 3,000 / Tape & Reel 13.5
15
16.5
(Pb−Free)
400
2.5 2.9 3.2
MMBV2105L
4U
SOT−23
Bulk (Note 1)
13.5
15
16.5
400
2.5 2.9 3.2
MV2105
MV2105 TO−92
1,000 per Box
13.5
15
16.5
400
2.5 2.9 3.2
MV2105G
MV2105 TO−92
1,000 per Box
13.5
15
16.5
(Pb−Free)
400
2.5 2.9 3.2
MMBV2107LT1
4W
SOT−23 3,000 / Tape & Reel 19.8
22
24.2
350
2.5 2.9 3.2
MMBV2107LT1G
4W
SOT−23 3,000 / Tape & Reel 19.8
22
24.2
(Pb−Free)
350
2.5 2.9 3.2
MMBV2107L
4W
SOT−23
Bulk (Note 1)
19.8
22
24.2
350
2.5 2.9 3.2
MMBV2108LT1
4X
SOT−23 3,000 / Tape & Reel 24.3
27
29.7
300
2.5 3.0 3.2
MMBV2108LT1G
4X
SOT−23 3,000 / Tape & Reel 24.3
27
29.7
(Pb−Free)
300
2.5 3.0 3.2
LV2209
LV2209 TO−92
1,000 per Box
29.7
33
36.3
200
2.5 3.0 3.2
MMBV2109LT1
4J
SOT−23 3,000 / Tape & Reel 29.7
33
36.3
200
2.5 3.0 3.2
MMBV2109LT1G
4J
SOT−23 3,000 / Tape & Reel 29.7
33
36.3
(Pb−Free)
200
2.5 3.0 3.2
MMBV2109L
4J
SOT−23
Bulk (Note 1)
29.7
33
36.3
200
2.5 3.0 3.2
MV2109
MV2109 TO−92
1,000 per Box
29.7
33
36.3
200
2.5 3.0 3.2
MV2109G
MV2109 TO−92
1,000 per Box
29.7
33
36.3
(Pb−Free)
200
2.5 3.0 3.2
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”
suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge at the specified frequency and substituting in the
following equations:
Q
+
2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use Lead
Length [ 1/16.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85°C in the following equation, which defines TCC:
Ť Ť TCC +
CT() 85°C) – CT(–65°C)
85 ) 65
·
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
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