MAC16HCD View Datasheet(PDF) - ON Semiconductor
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MAC16HCD Datasheet PDF : 8 Pages
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MAC16HCD, MAC16HCM, MAC16HCN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
" Peak On–State Voltage(1) (ITM = 21 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
" Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA)
Latch Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IDRM,
IRRM
VTM
IGT
IH
IL
—
—
—
—
—
—
10
16
10
18
10
22
—
20
—
33
—
36
—
33
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.5
0.80
0.5
0.73
0.5
0.82
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/µs, CL = 10 µF
Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
(di/dt)c
dv/dt
15
—
750
—
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
di/dt
—
—
Value
2.2
62.5
260
Max
0.01
2.0
1.6
50
50
50
50
60
80
60
1.5
1.5
1.5
—
—
10
Unit
°C/W
°C
Unit
mA
Volts
mA
mA
mA
Volts
A/ms
V/µs
A/µs
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