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IRL1104 View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRL1104
IR
International Rectifier IR
IRL1104 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRL1104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resis-
––– ––– 0.008
––– ––– 0.012
VGS = 10V, ID = 62A „
VGS = 4.5V, ID = 52A „
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
53 ––– ––– S VDS = 25V, ID = 62A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg
Total Gate Charge
––– ––– 68
ID = 62A
Qgs
Gate-to-Source Charge
––– ––– 24 nC VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 33
VGS = 4.5V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 20V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 257 –––
––– 32 –––
ns
ID = 62A
RG = 3.6, VGS = 4.5V
––– 64 –––
RD = 0.4, See Fig. 10 „
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
D
G
S
Ciss
Input Capacitance
––– 3445 –––
VGS = 0V
Coss
Output Capacitance
––– 1065 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 270 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 104…
MOSFET symbol
A showing the
––– ––– 416
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3
––– 84 126
––– 223 335
V TJ = 25°C, IS = 62A, VGS = 0V „
ns TJ = 25°C, IF = 62A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25, IAS =62A. (See Figure 12)
ƒ ISD 62A, di/dt 217A/µs, VDD V(BR)DSS,
TJ 175°C
2
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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