IRL1104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resis-
––– ––– 0.008 Ω
––– ––– 0.012
VGS = 10V, ID = 62A
VGS = 4.5V, ID = 52A
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
53 ––– ––– S VDS = 25V, ID = 62A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg
Total Gate Charge
––– ––– 68
ID = 62A
Qgs
Gate-to-Source Charge
––– ––– 24 nC VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 33
VGS = 4.5V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 20V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 257 –––
––– 32 –––
ns
ID = 62A
RG = 3.6Ω, VGS = 4.5V
––– 64 –––
RD = 0.4Ω, See Fig. 10
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
D
G
S
Ciss
Input Capacitance
––– 3445 –––
VGS = 0V
Coss
Output Capacitance
––– 1065 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 270 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 104
MOSFET symbol
A showing the
––– ––– 416
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.3
––– 84 126
––– 223 335
V TJ = 25°C, IS = 62A, VGS = 0V
ns TJ = 25°C, IF = 62A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25Ω, IAS =62A. (See Figure 12)
ISD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
2
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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