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IRFP450NPBF View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP450NPBF Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP450NPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP450N, SiHFP450N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.64
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
500
-
-
0.59
-
V
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100 nA
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
VDS = 500 V, VGS = 0 V
-
-
25
IDSS
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
RDS(on)
VGS = 10 V
ID = 8.4 Ab
-
-
0.37
Ω
Forward Transconductance
Dynamic
gfs
VDS = 50 V, ID = 8.4 A
7.9
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
2260
-
VDS = 25 V,
-
210
-
f = 1.0 MHz, see fig. 5
-
14
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
2410
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz
-
59
-
VDS = 0 V to 400 Vc
-
110
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
77
Qgs
VGS = 10 V
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
-
-
26
nC
Qgd
-
-
34
Turn-On Delay Time
td(on)
-
20
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD = 250 V, ID = 14 A
RG = 6.2 Ω,VGS = 10 V,
see fig. 10b
-
63
-
ns
-
29
-
-
25
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.4
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
430
650
ns
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
Qrr
-
3.7
5.6
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 400 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
2
Document Number: 91232
S-Pending-Rev. b, 26-Jun-08
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