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IRFP15N60LPBF View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
IRFP15N60LPBF
Vishay
Vishay Semiconductors Vishay
IRFP15N60LPBF Datasheet PDF : 0 Pages
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
100
30
46
Single
0.385
D
TO-247
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
• Lower Gate Charge Results in Simple Drive RoHS*
COMPLIANT
Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
TO-247
IRFP15N60LPbF
SiHFP15N60L-E3
IRFP15N60L
SiHFP15N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.9 mH, RG = 25 Ω, IAS = 15 A, dV/dt = 10 V/ns (see fig. 12a).
c. ISD 15 A, dI/dt 340 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91204
S09-0008-Rev. B, 19-Jan-09
LIMIT
600
± 30
15
9.7
60
2.3
320
15
28
280
10
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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