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IRFP15N60L-2008 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
IRFP15N60L(2008) Power MOSFET Vishay
Vishay Semiconductors Vishay
IRFP15N60L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP15N60L, SiHFP15N60L
Vishay Siliconix
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P DM
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
4.5
4.0
3.5
ID = 250μA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 13 - Threshold Voltage vs. Temperature
600
ID
500
TOP 6.7A
9.5A
BOTTOM 15A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD
A
Fig. 14b - Unclamped Inductive Test Circuit
www.vishay.com
6
VDS
tp
IAS
Fig. 14c - Unclamped Inductive Waveforms
Document Number: 91204
S-Pedning-Rev. B, 24-Jun-08
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