IRFP15N60L(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

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IRFP15N60L
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFP15N60L, SiHFP15N60L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1000

100

10

TOP

BOTTOM

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

5.0V

1000

100

10

1

TJ = 150°C

0.1

5.0V

0.01

0.001

0.1

20μs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

1

TJ = 25°C

0.1

VDS = 50V

20μs PULSE WIDTH

0.01

4

6

8

10

12

14

16

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

VGS

TOP

15V

12V

10V

9.0V

10

8.0V

BOTTOM

7.0V

6.0V

5.0V

1

5.0V

0.1

0.01

0.1

20μs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0

ID = 15A

2.5 VGS = 10V

2.0

1.5

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91204

S-Pedning-Rev. B, 24-Jun-08

www.vishay.com

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