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IRFP27N60KPBF View Datasheet(PDF) - International Rectifier

Part NameDescriptionManufacturer
IRFP27N60KPBF SMPS MOSFET IR
International Rectifier IR
IRFP27N60KPBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRFP27N60KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA
––– 180 220 mVGS = 10V, ID = 16A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
14 ––– ––– S VDS = 50V, ID = 16A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– ––– 180
ID = 27A
––– ––– 56 nC VDS = 480V
––– ––– 86
VGS = 10V, See Fig. 6 and 13 „
––– 27 –––
VDD = 300V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 110 ––– ns ID = 27A
––– 43 –––
RG = 4.3
––– 38 –––
VGS = 10V,See Fig. 10 „
––– 4660 –––
VGS = 0V
Coss
Crss
Coss
Coss
Coss eff.
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 460 –––
––– 41 –––
––– 5490 –––
––– 120 –––
––– 250 –––
VDS = 25V
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 27
A showing the
integral reverse
G
––– ––– 110
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 27A, VGS = 0V „
––– 620 920 ns TJ = 25°C, IF = 27A
––– 11 16 µC di/dt = 100A/µs „
––– 36 53 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
ƒ ISD 27A, di/dt 390A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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