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IRF1104SPBF View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRF1104SPBF
IR
International Rectifier IR
IRF1104SPBF Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRF1104S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.009 VGS = 10V, ID = 60A „
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
37 ––– ––– S VDS = 30V, ID = 60A…
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg
Total Gate Charge
––– ––– 93
ID = 60A
Qgs
Gate-to-Source Charge
––– ––– 29 nC VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 30
VGS = 10V, See Fig. 6 and 13 „…
td(on)
Turn-On Delay Time
––– 15 –––
VDD = 20V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 114 –––
––– 28 ––– ns
ID = 60A
RG = 3.6
tf
Fall Time
––– 19 –––
RD = 0.33, See Fig. 10 „…
LS
Internal Source Inductance
––– 7.5 ––– nH
Between lead,
and center of die contact
Ciss
Input Capacitance
––– 2900 –––
VGS = 0V
Coss
Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 250 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
MOSFET symbol
D
––– ––– 100†
A
showing the
integral reverse
G
––– ––– 400
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– ––– 1.3
––– 74 110
––– 188 280
V TJ = 25°C, IS =60A, VGS = 0V „
ns TJ = 25°C, IF =60A
nC di/dt = 100A/µs „…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 194µH
RG = 25, IAS = 60A. (See Figure 12)
… Uses IRF1104 data and test conditions.
† Calculated continuous current based on maximum allowable
ƒ ISD 60A, di/dt 304A/µs, VDD V(BR)DSS,
TJ 175°C
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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