FMB2222A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
| FMB2222A Datasheet PDF : 0 Pages | |||
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
40
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
75
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
ICEX
Collector Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 125°C
VEB = 3.0 V, IC = 0
IBL
Base Cutoff Current
VCE = 60 V, VEB(OFF) = 3.0 V
V
V
V
10
nA
0.01 µA
10
µA
10
nA
20
nA
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain
IC = 0.1 mA, VCE = 10 V
35
IC = 1.0 mA, VCE = 10 V
50
IC = 10 mA, VCE = 10 V
75
IC= 10 mA,VCE= 10 V,TA= -55°C 35
IC = 150 mA, VCE = 10 V*
100
IC = 150 mA, VCE = 1.0 V*
50
IC = 500 mA, VCE = 10 V*
40
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage*
IC = 150 mA, IB = 1.0 mA
0.6
IC = 500 mA, IB = 50 mA
300
0.3
V
1.0
V
1.2
V
2.0
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 100 kHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5 V, IC = 0, f = 100 kHz
20
pF
NF
Noise Figure
IC = 100 µA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
2.0
dB
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCC = 30 V, VBE(OFF) = 0.5 V,
IC = 150 mA, IB1 = 15 mA
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
8
ns
20
ns
180
ns
40
ns
|
|
Share Link: 