FDS6961 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
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FDS6961 Datasheet PDF : 5 Pages
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April 1999
FDS6961A
Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
3.5 A, 30 V. RDS(ON) = 0.090 Ω @ VGS = 10 V
RDS(ON) = 0.140 Ω @ VGS = 4.5 V.
Fast switching speed.
Low gate charge (2.1nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
F6D9S61A
SO-8
G2
S2
pin 1
G1
S1
SO-8
5
6
7
8
SOT-223
SOIC-16
4
3
2
1
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1)
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Fairchild Semiconductor Corporation
Ratings
30
±20
3.5
14
2
1.6
1
0.9
-55 to 150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
FDS6961A Rev.C
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