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MC-4516CB647EF-A75 View Datasheet(PDF) - Elpida Memory, Inc

Part NameDescriptionManufacturer
MC-4516CB647EF-A75 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Elpida
Elpida Memory, Inc Elpida
MC-4516CB647EF-A75 Datasheet PDF : 16 Pages
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MC-4516CB647
Asynchronous Characteristics
Parameter
Symbol
-A 75
Unit
MIN.
MAX.
ACT to REF/ACT command period (operation)
tRC
67.5
ns
REF to REF/ACT command period (refresh)
tRC1
67.5
ns
ACT to PRE command period
tRAS
45
120,000
ns
PRE to ACT command period
tRP
20
ns
Delay time ACT to READ/WRITE command
tRCD
20
ns
ACT(one) to ACT(another) command period
tRRD
15
ns
Data-in to PRE command period
tDPL
8
ns
Data-in to ACT(REF) command
/CAS latency = 3
tDAL3
1CLK+22.5
ns
period (Auto precharge)
/CAS latency = 2
tDAL2
1CLK+20
ns
Mode register set cycle time
tRSC
2
CLK
Transition time
tT
0.5
30
ns
Refresh time (4,096 refresh cycles)
tREF
64
ms
Note This device can satisfy the tDAL3 spec of 1CLK+20 ns for up to and including 125 MHz operation.
Note
1
1
Data Sheet E0058N20
9
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