datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

MC-4516CB647PF-A75 View Datasheet(PDF) - Elpida Memory, Inc

Part Name
Description
View to exact match
MC-4516CB647PF-A75 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB647
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words by 64 bits synchronous
dynamic RAM module on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
MC-4516CB647EF-A75
MC-4516CB647PF-A75
MC-4516CB647XF-A75
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
133 MHz
100 MHz
133 MHz
100 MHz
133 MHz
100 MHz
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ±10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
Access time from CLK
(MAX.)
5.4 ns
6.0 ns
5.4 ns
6.0 ns
5.4 ns
6.0 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
Document No. E0058N20 (Ver. 2.0)
Date Published March 2001 CP (K)
Printed in Japan
This product became EOL in September, 2002.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]